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Development of Thermally Stimulated Exoelectron Emission (TSEE) technique for the detection and characterisation of surface and interface defects in silicon (Si) and gallium arsenide (GaAs)

Railkar, Tarak A

Development of Thermally Stimulated Exoelectron Emission (TSEE) technique for the detection and characterisation of surface and interface defects in silicon (Si) and gallium arsenide (GaAs) Railkar, Tarak A - Pune Savitribai Phule Pune University 1994

Subjects--Index Terms: Semiconductors||Gamma irradiation||Gallium arsenide||Exoemission||Polycrystalline

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Savitribai Phule Pune University, Pune

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Development of Thermally Stimulated Exoelectron Emission (TSEE) technique for the detection and characterisation of surface and interface defects in silicon (Si) and gallium arsenide (GaAs)